Q1) Tn the cirenik below, the source ond drain ac vo tinges ave held ot ground . Denve an enpression for fr. (Bonus: 10 points) Ceo oy 1 tout i, + Ces The hreueny ob which, the went gain of the MOS device drops Ho 1, Js called he“ Teamsit Frequacy” BL Ta = =) N——r—C— TT
Question:
Q1) Tn the cirenik below, the source ond drain ac vo tinges ave held ot ground .
Denve an enpression for fr. (Bonus: 10 points)
Ceo
oy 1
tout
i, +
Ces
The hreueny ob which, the went gain of the MOS device drops Ho 1, Js
called he“ Teamsit Frequacy” BL Ta = =)
N——r—C— TT
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Asked by: ABCD
Created at: 2025-09-17 13:03:10
Asked by: ABCD
Created at: 2025-09-17 13:03:10
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Let's break down the problem and derive the expression for the **transit frequency** \( f_T \) for the given MOS device.
---
### **Step 1: Understanding the Circuit**
- **Given:**
- The source and drain **AC voltages** are held at ground.
- Only the **gate** is driven by an input AC current \( i_{in} \).
- Capacitances: \( C_{GS} \) (gate-source), \( C_{GD} \) (gate-drain).
#### **Small-Signal Equivalent**
- Since source and drain are at AC ground:
- The gate sees **two capacitors to ground**: \( C_{GS} \) and \( C_{GD} \).
- The input current \( i_{in} \) splits between these two capacitors.
---
### **Step 2: Current Gain Definition**
- The frequency where the **current gain** drops to **1** is the **transit frequency \( f_T \)**:
\[
\left| \frac{i_{out}}{i_{in}} \right| = 1 \quad \text{at} \quad f = f_T
\]
---
### **Step 3: Small-Signal Analysis**
- **Apply KCL at the gate node:**
\[
i_{in} = i_{C_{GS}} + i_{C_{GD}}
\]
Since both **source** and **drain** are at AC ground:
\[
i_{C_{GS}} = C_{GS} \frac{dV_{gs}}{dt}
\]
\[
i_{C_{GD}} = C_{GD} \frac{dV_{gd}}{dt}
\]
But \( V_{gs} = V_{gd} \) (since source and drain AC voltages are zero), so:
\[
i_{in} = (C_{GS} + C_{GD}) \frac{dV_g}{dt}
\]
- **Output Current:**
- The current through \( C_{GD} \) (to ground) is **output current**:
\[
i_{out} = i_{C_{GD}} = C_{GD} \frac{dV_g}{dt}
\]
---
### **Step 4: Current Gain Expression**
\[
\frac{i_{out}}{i_{in}} = \frac{C_{GD}}{C_{GS} + C_{GD}}
\]
But, **at high frequencies**, the gate current is also affected by the transistor's transconductance \( g_m \):
- If the MOSFET has a transconductance \( g_m \), then at the gate:
- \( i_{out} = g_m V_{gs} \)
- \( i_{in} = j \omega (C_{GS} + C_{GD}) V_{gs} \)
So, the **current gain** becomes:
\[
\left| \frac{i_{out}}{i_{in}} \right| = \left| \frac{g_m V_{gs}}{j\omega (C_{GS}+C_{GD}) V_{gs}} \right| = \frac{g_m}{\omega (C_{GS} + C_{GD})}
\]
---
### **Step 5: Find \( f_T \) ("Transit Frequency")**
Set the current gain to 1:
\[
\frac{g_m}{2\pi f_T (C_{GS} + C_{GD})} = 1
\]
\[
f_T = \frac{g_m}{2\pi (C_{GS} + C_{GD})}
\]
---
## **Final Expression**
\[
\boxed{
f_T = \frac{g_m}{2\pi (C_{GS} + C_{GD})}
}
\]
---
### **Summary**
- **Transit frequency \( f_T \)** is the frequency where the current gain drops to 1.
- **Expression:** \( f_T = \frac{g_m}{2\pi (C_{GS} + C_{GD})} \)
- **Assumption:** Both source and drain are at AC ground; only gate is driven.
If you need the derivation considering only the capacitive divider (ignoring \( g_m \)), let me know!
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