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Give final answer with brief explanation. J i BP | i a (0) out : IN ons T&F | BE i Ate BN A) : ‘a | > Sn Vs EAN - FAN AT 2) Bhs. al | & ay STR fr J | po or he. SRR es) parameter Pe 222d Tara v : or J NG AE | ads ANE v u | rds \ 4 w En 2S To SE vit = RONG Sau 2 '@ # CL " vin? s Cae A ts a> Po J 2! i= g— NS 3 SSeS x Sh aN NONI ES (Ge Si = _ ea >= = Bo NT NG a > OB 4 — ¥ BR aA - pp DN EAT BR ORR = rea >3 ENON Sh CONTE a > BR SES SY TN | °F ph] | = | I vl : © vm | f J v - N 31% ro = | . 2 Snag 04 | H v y te Ha she 02 ” REE LTTR v : SE HELEN EEE Eo AY TER Describe the state of PMOSINMOS 3nd output m A : A R. 10 5 and output signal OUT) for exh rp below oy > £5 (Note: Represent the PMOS3/NMOS states as (OFF, SATURATION] and use UNKNOWN forany: the banks becw f heres 8 ct looms | € i ee GA) 1. For IN= V, PMOS state NOs ste ours v - 8 == a oN on v ; rE : EL io Mosse ! \ EE 1 als i Foi are 2 SG 3 Fore

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Give final answer with brief explanationUploaded ImageUploaded Image. J i BP | i a (0) out : IN ons T&F | BE i Ate BN A) : ‘a | > Sn Vs EAN - FAN AT 2) Bhs. al | & ay STR fr J | po or he. SRR es) parameter Pe 222d Tara v : or J NG AE | ads ANE v u | rds \ 4 w En 2S To SE vit = RONG Sau 2 '@ # CL " vin? s Cae A ts a> Po J 2! i= g— NS 3 SSeS x Sh aN NONI ES (Ge Si = _ ea >= = Bo NT NG a > OB 4 — ¥ BR aA - pp DN EAT BR ORR = rea >3 ENON Sh CONTE a > BR SES SY TN | °F ph] | = | I vl : © vm | f J v - N 31% ro = | . 2 Snag 04 | H v y te Ha she 02 ” REE LTTR v : SE HELEN EEE Eo AY TER Describe the state of PMOSINMOS 3nd output m A : A R. 10 5 and output signal OUT) for exh rp below oy > £5 (Note: Represent the PMOS3/NMOS states as (OFF, SATURATION] and use UNKNOWN forany: the banks becw f heres 8 ct looms | € i ee GA) 1. For IN= V, PMOS state NOs ste ours v - 8 == a oN on v ; rE : EL io Mosse ! \ EE 1 als i Foi are 2 SG 3 Fore

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Asked by: Prasanna Manda
Created at: 2025-09-27 20:06:33

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## Final Answer with Brief Explanation Given parameters: - **VDD = 1V** - **Vth1 (PMOS threshold) = .4V** - **Vth2 (NMOS threshold) = .4V** - **<in1> = .8V** - **<in2> = .4V** - **<in3> = .2V** ### Input/Output States (for each input): #### 1. For IN = <in1> = .8V - **PMOS:** Source at VDD = 1V; gate at .8V; VSG = 1 - .8 = .2V < Vth1 → **OFF** - **NMOS:** Gate at .8V; source at V; VGS = .8V > Vth2 → **ON (SATURATION)** - **OUT:** Pulled to V (GND) via NMOS **Final: PMOS = OFF, NMOS = SATURATION, OUT = V** --- #### 2. For IN = <in2> = .4V - **PMOS:** VSG = 1 - .4 = .6V > Vth1 → **ON (SATURATION)** - **NMOS:** VGS = .4V = Vth2 → **OFF** (at threshold, assume OFF for digital) - **OUT:** Pulled up to VDD via PMOS **Final: PMOS = SATURATION, NMOS = OFF, OUT = 1V** --- #### 3. For IN = <in3> = .2V - **PMOS:** VSG = 1 - .2 = .8V > Vth1 → **ON (SATURATION)** - **NMOS:** VGS = .2V < Vth2 → **OFF** - **OUT:** Pulled up to VDD via PMOS **Final: PMOS = SATURATION, NMOS = OFF, OUT = 1V** --- ### **Summary Table** | IN | PMOS State | NMOS State | OUT | |------|--------------|--------------|-----| | .8V | OFF | SATURATION | V | | .4V | SATURATION | OFF | 1V | | .2V | SATURATION | OFF | 1V | --- **Explanation:** The PMOS turns ON when input is less than (VDD - Vth1), and NMOS turns ON when input is greater than Vth2. Depending on which is ON, the output is either pulled up (1V) or down (V).

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