Act like a helpful tutor and exlain step-by-step solution with explanation and final answer:5. (10pts) Aluminium is to be diffused into a silicon wafer via the common two-step process. The
pre-deposition diffusion is conducted at 975°C for 1.25 h with a surface concentration of 4 x 102®
Al atoms/m?3. The drive-in diffusion is conducted at 1050°C for 0.95 h. The bulk concentration of
Alin Si is 1.75 x 10° atoms/m?. Please calculate: 1) the value of @,, which is total aluminium
concentration introduced by pre-deposition process; 2) the value of x;, which is the junction
depth after the drive-in diffusion process.
For this system, values of Qsand Do are 3.41 eV/atom and 1.38 x 10~* m?/s, respectively.
Question:
Act like a helpful tutor and exlain step-by-step solution with explanation and final answer:5. (10pts) Aluminium is to be diffused into a silicon wafer via the common two-step process. The
pre-deposition diffusion is conducted at 975°C for 1.25 h with a surface concentration of 4 x 102®
Al atoms/m?3. The drive-in diffusion is conducted at 1050°C for 0.95 h. The bulk concentration of
Alin Si is 1.75 x 10° atoms/m?. Please calculate: 1) the value of @,, which is total aluminium
concentration introduced by pre-deposition process; 2) the value of x;, which is the junction
depth after the drive-in diffusion process.
For this system, values of Qsand Do are 3.41 eV/atom and 1.38 x 10~* m?/s, respectively.
This is AI generated Response.
Asked by: Francis
Created at: 2026-02-24 00:51:43
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